NDSH25170A
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 506 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- These Devices are Halogen Free/BFR Free and are Ro HS pliant
Applications
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
1 2 TO- 247- 2LD CASE 340DA
MARKING DIAGRAM
AYWWZZ NDSH 25170A
A YWW ZZ NDSH25170A
= Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Code
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