Datasheet4U Logo Datasheet4U.com

NDSH25170A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 506 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • These Devices are Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – NDSH25170A

Datasheet Details

Part number NDSH25170A
Manufacturer ON Semiconductor
File Size 350.09 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet NDSH25170A Datasheet
Additional preview pages of the NDSH25170A datasheet.

📁 Similar Datasheet

  • NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZB-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZD-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZE-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS0605 - P-Channel Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS0610 - P-Channel Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS331N - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS331N - N-Channel MOSFET (VBsemi)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L NDSH25170A 1. Cathode 2. Anode Schottky Diode Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Published: |