NDSH30120CDN
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 110 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- This Device is Halide Free and Ro HS pliant with Exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
12 3 TO- 247- 3LD CASE 340CX
MARKING DIAGRAM
DSH30 120CDN AYWWZZ
DSH30120CDN A YWW ZZ
= Specific Device Code =...
