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NDSH30120CDN Datasheet SiC Schottky Diode

Manufacturer: onsemi

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General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Overview

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1.

Anode 2.

Cathode/ 3.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 110 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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