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NDDL01N60Z, NDTL01N60Z
N-Channel Power MOSFET 600 V, 15 W
Features
• 100% Avalanche Tested • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current Steady State, TC = 25°C (Note 1)
Continuous Drain Current Steady State, TC = 100°C (Note 1)
Power Dissipation Steady State, TC = 25°C
Pulsed Drain Current, tp = 10 ms Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (ID = 0.8 A)
Peak Diode Recovery (Note 2)
VDSS VGS ID
ID
PD
IDM IS EAS
dv/dt
600 ±30 0.8 0.25
V V A
0.5 0.15 A
26 2 W
3.4 2.5 1.7
12
A A mJ
4.
NDTL01N60Z Datasheet
