NFAM3512L7B Description
Pin Name Description 1 VS(U) High-Side Bias Voltage GND for U Phase IGBT Driving (2) − Dummy 3 VB(U) High-Side Bias Voltage for U Phase IGBT Driving 4 VDD(UH) High-Side Bias Voltage for U Phase IC (5) − Dummy 6 HIN(U) Signal Input for High-Side U Phase.
NFAM3512L7B Key Features
- Very Low Thermal Resistance Using Al2O3 DBC Substrate
- Active Logic Interface
- Built-in Under-voltage Protection (UVP)
- Built-In Bootstrap Diodes/Resistors
- Separate Low-side IGBT Emitter Connections for Individual
- Temperature Sensor (TSU Output by LVIC)
- UL Certification: E209204
- This is a Pb-Free Device