NGTB15N120IHLWG Datasheet | onsemi

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on- state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co- packaged free wheeling diode with a low forward voltage. Features http://onsemi. - - - - - Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb- Free Devices 15 A, 1200 V VCEsat = 1.8 V Eoff = 0.56 m J Typical Applications - Inductive Heating - Consumer Appliances - Soft...