NGTB40N60IHLWG - IGBT

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

Datasheet Details

Part number	NGTB40N60IHLWG
Manufacturer	ON Semiconductor
File Size	205.78 KB
Description	IGBT
Datasheet	NGTB40N60IHLWG Datasheet
Additional preview pages of the NGTB40N60IHLWG datasheet.

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Full PDF Text Transcription

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NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Published: Jan 2, 2017 |