NGTB40N65IHRTG - IGBT

Features

robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for.

ON Semiconductor

Datasheet Details

Part number	NGTB40N65IHRTG
Manufacturer	ON Semiconductor
File Size	157.09 KB
Description	IGBT
Datasheet	NGTB40N65IHRTG Datasheet
Additional preview pages of the NGTB40N65IHRTG datasheet.

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Full PDF Text Transcription

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NGTB40N65IHRTG IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.

Published: Apr 13, 2020 |