NGTB45N60S1WG - IGBT

Features

a robust and cost effective Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

Datasheet Details

Part number	NGTB45N60S1WG
Manufacturer	ON Semiconductor
File Size	76.07 KB
Description	IGBT
Datasheet	NGTB45N60S1WG Datasheet
Additional preview pages of the NGTB45N60S1WG datasheet.

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Full PDF Text Transcription

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NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Published: Aug 27, 2017 |