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NGTG25N120FL2WG - IGBT

Features

  • a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching.

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Datasheet Details

Part number NGTG25N120FL2WG
Manufacturer onsemi
File Size 133.37 KB
Description IGBT
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Full PDF Text Transcription

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NGTG25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
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