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NGTG30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • 5 ms Short−Circuit Capability • These are Pb−Free Devices
Typical Applications
• Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage Collector current
@ TC = 25°C @ TC = 100°C
VCES 600 V IC A 60 30
Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.
NGTG30N60FWG Datasheet
