NGTG50N60FWG
NGTG50N60FWG is IGBT manufactured by onsemi.
features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
- Optimized for Very Low VCEsat
- Low Switching Loss Reduces System Power Dissipation
- 5 ms Short- Circuit Capability
- These are Pb- Free Devices
Typical Applications
- Solar Inverters
- Uninterruptible Power Supples (UPS)
- Motor Drives
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- emitter voltage Collector current
@ TC = 25°C @ TC = 100°C
VCES 600 V IC A 100 50
Pulsed collector current, Tpulse limited by TJmax Short- circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate- emitter voltage Transient Gate- Emitter Voltage
ICM 200 A t SC 5 ms
$20
$30
Power Dissipation @ TC = 25°C @ TC = 100°C
PD W 223 89
Operating junction temperature range
- 55 to +150 °C
Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds
Tstg TSLD
- 55 to +150 260
°C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. http://onsemi.
50 A, 600 V VCEsat = 1.50 V
TO- 247 CASE 340L
STYLE 4
MARKING...
