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NIC9N05TS1, NIC9N05ATS1
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Operating and Storage Temperature Range Electro−Static Discharge Capability (HBM)
(MM)
VDSS VGS TJ, Tstg ESD
52−59 ±15
−55 to 150 5000 500
V V °C V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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NIC9N05TS1 Datasheet
