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NIMD6302R2 - HDPlus Dual N-Channel Self-protected Field Effect Transistors

Features

  • They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This HDPlus device features an integrated Gate.
  • to.
  • Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring.
  • ±3.5% Current Mirror Accuracy in Linear Region.
  • ±15% Cu.

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Datasheet Details

Part number NIMD6302R2
Manufacturer ON Semiconductor
File Size 116.48 KB
Description HDPlus Dual N-Channel Self-protected Field Effect Transistors
Datasheet download datasheet NIMD6302R2 Datasheet
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NIMD6302R2 HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS™ series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This HDPlus device features an integrated Gate−to−Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring. • ±3.
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