NJVMJD3055T4G - Complementary Power Transistors

onsemi

Download the NJVMJD3055T4G datasheet PDF. This datasheet also covers the NJVMJD2955T4G variant, as both devices belong to the same complementary power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

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NJVMJD3055T4G complementary power transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NJVMJD2955T4G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NJVMJD3055T4G
Manufacturer	onsemi
File Size	195.64 KB
Description	Complementary Power Transistors
Datasheet	NJVMJD3055T4G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS  Lead Formed for Surface Mount Applications in Plastic Sleeves         (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V−0 @ 0.