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NL17SH125 - Non-Inverting 3-State Buffer

Key Features

  • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V.
  • Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C.
  • Power Down Protection Provided on Inputs.
  • Balanced Propagation Delays.
  • These are Pb.
  • Free and Halide.
  • Free Devices http://onsemi. com.

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Datasheet Details

Part number NL17SH125
Manufacturer onsemi
File Size 95.95 KB
Description Non-Inverting 3-State Buffer
Datasheet download datasheet NL17SH125 Datasheet

Full PDF Text Transcription for NL17SH125 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NL17SH125. For precise diagrams, and layout, please refer to the original PDF.

NL17SH125 Non-Inverting 3-State Buffer The NL17SH125 MiniGatet is an advanced high−speed CMOS non−inverting buffer in ultra−small footprint. The NL17SH125 requires the 3−...

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verting buffer in ultra−small footprint. The NL17SH125 requires the 3−state control input (OE) to be set High to place the output in the high impedance state. The NL17SH125 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. Features • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • These are Pb−Free and Halide−Free Devices http://onsemi.com MARKING DIAGRAM SOT−953 CASE 527AE 1 T = Specific Device Code (Rotated 90°) M = Month Code T M IN A