NLAS3899B Datasheet PDF - ON Semiconductor Dual DPDT Low Capacitance Switch Specs

NLAS3899B - Dual DPDT Low Capacitance Switch

Datasheet Summary

Features

Single Supply Operation 1.65 to 4.3 V VCC Function Directly from Li.
Ion Battery.
Low ON Resistance (3.0 W Typical Across VCC).
Low CON (20 pF Typical).
Bandwidth 280 MHz.
Maximum Breakdown Voltage: 5.5 V.
Low Static Power.
Interfaces with 1.8 V Chipset.
These are Pb.
Free Devices Typical.

Datasheet Details

Part number	NLAS3899B
Manufacturer	ON Semiconductor
File Size	131.74 KB
Description	Dual DPDT Low Capacitance Switch
Datasheet	NLAS3899B Datasheet
Additional preview pages of the NLAS3899B datasheet.

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Full PDF Text Transcription

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NLAS3899B Dual DPDT Low RON, Low Capacitance Switch The NLAS3899B is a dual DPDT analog switch designed for low power audio and dual SIM card applications. The low RON of 3.0 W (typical) is ideal for routing audio signals to or from a moderately high impedance load. In addition, the low CON of 20 pF (typical) gives the NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card applications. Features • Single Supply Operation 1.65 to 4.3 V VCC Function Directly from Li−Ion Battery • Low ON Resistance (3.0 W Typical Across VCC) • Low CON (20 pF Typical) • Bandwidth 280 MHz • Maximum Breakdown Voltage: 5.5 V • Low Static Power • Interfaces with 1.

Published: Dec 11, 2016 |