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NLAS4685 - Ultra-Low Resistance Dual SPDT Analog Switch

Key Features

  • guaranteed Break Before Make switching, assuring the switches never short the driver. The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array, with a 3 x 4 arrangement of solder bumps. The pitch of the solder bumps is 0.5 mm for easy handling. Features.
  • Ultra.
  • Low RON, t0.8 W at 2.7 V.
  • Threshold Adjusted to Function with 1.8 V Control at VCC = 2.7.
  • 3.3 V.
  • Single Supply Operation from 1.8.
  • 5.5 V.
  • Tiny 2 x 1.5 mm Bumped Die.
  • Lo.

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Datasheet Details

Part number NLAS4685
Manufacturer onsemi
File Size 153.74 KB
Description Ultra-Low Resistance Dual SPDT Analog Switch
Datasheet download datasheet NLAS4685 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and for the Normally Opened switch (NO) at 2.7 V. The part also features guaranteed Break Before Make switching, assuring the switches never short the driver. The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array, with a 3 x 4 arrangement of solder bumps. The pitch of the solder bumps is 0.5 mm for easy handling. Features • Ultra−Low RON, t0.8 W at 2.7 V • Threshold Adjusted to Function with 1.8 V Control at VCC = 2.7−3.3 V • Single Supply Operation from 1.8−5.5 V • Tiny 2 x 1.