Make (BBM) switching, assuring the switches never short the driver. The NLAS4717EP is available in two small size packages: Microbump: 2.0 x 1.5 mm WQFN.
10: 1.4 x 1.8 mm
Features.
Low RDS(on): 4.5 W @ 3.0 V.
Matching Between the Switches 0.5 W.
Wide Voltage Range: 1.8 V to 5.5 V.
High Bandwidth > 90 MHz.
1.65 V to 5.5 V Operating Range.
Low Threshold Voltages on Pins 4 and 8 (CTRL Pins).
Full PDF Text Transcription for NLAS4717EP (Reference)
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NLAS4717EP. For precise diagrams, and layout, please refer to the original PDF.
NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The devic...
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witch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring low RDS(on) of 4.5 W at 3.0 V. The device also features guaranteed Break−Before−Make (BBM) switching, assuring the switches never short the driver. The NLAS4717EP is available in two small size packages: Microbump: 2.0 x 1.5 mm WQFN−10: 1.4 x 1.8 mm Features Low RDS(on): 4.5 W @ 3.0 V Matching Between the Switches 0.5 W Wide Voltage Range: 1.8 V to 5.5 V High Bandwidth > 90 MHz 1.65 V to 5.5 V Operating Range Low Threshold Voltages on Pins 4 and 8 (CTRL Pins) Ultr
NLAS4717EP Datasheet
