NRVBS3200T3G Datasheet | onsemi

Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. Features - Small pact Surface Mountable Package with J- Bend Leads - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - Very High Blocking Voltage - 200 V - 175°C Operating Junction Temperature - Guard- Ring for Stress Protection - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC- Q101 Qualified and PPAP Capable- - These are Pb- Free Devices Mechanical Charactersistics - Case: Epoxy, Molded, Epoxy Meets UL 94, V- 0 - Weight: 95 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Cathode Polarity Band - Device Meets MSL 1 Requirements - ESD Ratings: - Machine Model = A - Human Body Model = 1C DATA SHEET .onsemi. SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS SMB CASE 403A MARKING...