NSBA1xxxDXV6T1 Datasheet | onsemi

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base- emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual ponents by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT- 563 package which is ideal for low- power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) (6) http://onsemi. (2) R2 (1) - - - - Simplifies Circuit Design Reduces Board Space Reduces ponent Count These are Pb- Free Devices .. SOT- 563 CASE 463A PLASTIC STYLE 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, mon for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value - 50 - 50 - 100 Unit Vdc Vdc m Adc xx M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range Symbol PD Rq JA Max 357 2.9 350 Unit m W m W/°C °C/W xx = Device Code (Refer to page 2) M = Date Code G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSBA1xxx DXV6T1 Package Shipping † SOT- 563- 4000/Tape & Reel NSBA1xxx DXV6T1G SOT- 563- 4000/Tape & Reel Symbol PD Rq JA TJ, Tstg Max 500 4.0 250 - 55 to +150 Unit m W m W/°C °C/W °C NSBA1xxx DXV6T5 SOT- 563- 8000/Tape & Reel NSBA1xxx DXV6T5G SOT- 563- 8000/Tape & Reel †For...