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NSL12TT1
High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications
MAXIMUM RATINGS (TA = 25°C) Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak Collector Current – Continuous
Electrostatic Discharge
Symbol VCEO VCBO VEBO IC
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C Derate above 25°C
PD (Note 1)
Thermal Resistance, Junction to Ambient
RθJA (Note 1)
Total Device Dissipation
TA = 25°C Derate above 25°C
PD (Note 2)
Thermal Resistance, Junction to Ambient
RθJA (Note 2)
Thermal Resistance, Junction to Lead #3
RθJL
Junction and Storage Temperature Range
TJ, Tstg
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad
Max Unit
–12 Vdc
–20 Vdc
–4.
NSL12TT1 Datasheet
