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NSL5TT1
Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Peak Collector Current − Continuous
VCEO VCBO VEBO
IC
−5.0
−10
−4.0
−1.0 −0.5
Vdc Vdc Vdc Adc
Electrostatic Discharge
ESD
HBM Class 3 MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note 1.)
210 mW 1.7 mW/°C
Thermal Resistance, Junction to Ambient
RθJA (Note 1.)
595
°C/W
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note 2.)
365 mW 2.9 mW/°C
Thermal Resistance, Junction to Ambient
RθJA (Note 2.