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NSR10F30QNXT5G - Schottky Diode Optimized for High Frequency Switching Power Supplies

Datasheet Summary

Features

  • Low Forward Voltage Drop.
  • 420 mV @ 1.0 A.
  • Low Reverse Current.
  • 20 mA @ 10 V VR.
  • 1.0 A of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NSR10F30QNXT5G
Manufacturer ON Semiconductor
File Size 252.97 KB
Description Schottky Diode Optimized for High Frequency Switching Power Supplies
Datasheet download datasheet NSR10F30QNXT5G Datasheet
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NSR10F30QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Low Forward Voltage Drop − 420 mV @ 1.0 A • Low Reverse Current − 20 mA @ 10 V VR • 1.
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