NSS12200WT1G Overview
NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and...
NSS12200WT1G Key Features
- High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a
- High Specific Current and Power Capability Reduces Required PCB Area
- Reduced Parasitic Losses Increases Battery Life
- Continuous Collector Current
- Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -2.0 -3.0 Unit Vdc Vdc Vdc Adc
- Rev. 0