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NSS40300DDR2G - Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor

Features

  • http://onsemi. com 40 VOLTS 6.0 AMPS PNP LOW VCE(sat).

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Note: The manufacturer provides a single datasheet file (NSS40300DDR2G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NSS40300DDR2G
Manufacturer onsemi
File Size 130.67 KB
Description Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor
Datasheet download datasheet NSS40300DDR2G Datasheet
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Full PDF Text Transcription

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NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 40 VOLTS 6.
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