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NST3904DXV6T1G - Dual General Purpose Transistor

Key Features

  • hFE, 100.
  • 300.
  • Low VCE(sat), ≤ 0.4 V.
  • Simplifies Circuit Design.
  • Reduces Board Space.
  • Reduces Component Count.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • NSVT3904DXV6T1G.
  • NSV Prefix for Automotive and Other.

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Datasheet Details

Part number NST3904DXV6T1G
Manufacturer onsemi
File Size 136.11 KB
Description Dual General Purpose Transistor
Datasheet download datasheet NST3904DXV6T1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.