NTB5605P
NTB5605P is P-Channel Power MOSFET manufactured by onsemi.
Features
- Designed for Low RDS(on)
- Withstands High Energy in Avalanche and mutation Modes
- AEC Q101 Qualified
- NTBV5605
- These Devices are Pb- Free and are Ro HS pliant
Applications
- Power Supplies
- PWM Motor Control
- Converters
- Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
- 60
Gate- to- Source Voltage
$20
Continuous Drain Current (Note 1)
Steady TA = 25°C
State
- 18.5 A
Power Dissipation (Note 1)
Steady TA = 25°C
State
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.0 m H, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)
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