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NTB5605P, NTBV5605
MOSFET – Power, P-Channel, D2PAK
-60 V, -18.5 A
Features
• Designed for Low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes • AEC Q101 Qualified − NTBV5605 • These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies • PWM Motor Control • Converters • Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
$20
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State
−18.5 A
Power Dissipation (Note 1)
Steady TA = 25°C
PD
State
88
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.
NTB5605P Datasheet
