NTB75N03-06 Overview
This power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The Drain−to−Source Diode has a fast response with soft recovery.
NTB75N03-06 Key Features
- Ultra-Low RDS(on), Single Base, Advanced Technology
- SPICE Parameters Available
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperatures
- High Avalanche Energy Capability
- ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
- Pb-Free Packages are Available