Datasheet4U Logo Datasheet4U.com

NTBG015N065SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 283 nC).
  • Low Effective Output Capacitance (Coss = 424 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTB0101 Dual supply translating transceiver NXP
NTB0101A Auto direction sensing dual supply NXP
NTB0102 Dual supply translating transceiver NXP
NTB0102-Q100 Dual supply translating transceiver NXP
NTB0104 Dual supply translating transceiver NXP

Other Datasheets by onsemi

Part Number Description
NTBG014N120M3P SiC MOSFET
NTBG020N090SC1 SiC MOSFET
NTBG020N120SC1 SiC MOSFET
NTBG025N065SC1 SiC MOSFET
NTBG028N170M1 SiC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ.