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NTBG015N065SC1 Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2,.

Key Features

  • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 283 nC).
  • Low Effective Output Capacitance (Coss = 424 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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