NTBG060N065SC1 Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1.
NTBG060N065SC1 Key Features
- Typ. RDS(on) = 44 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 74 nC)
- Low Output Capacitance (Coss = 133 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant