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NTBG060N065SC1 - SiC MOSFET

Features

Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 74 nC).
Low Output Capacitance (Coss = 133 pF).
100% Avalanche Tested.
TJ = 175°C.
RoHS Compliant Typical.

onsemi

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NTBG060N065SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG060N065SC1

Datasheet Details

Part number	NTBG060N065SC1
Manufacturer	onsemi
File Size	305.76 KB
Description	SiC MOSFET
Datasheet	NTBG060N065SC1 Datasheet
Additional preview pages of the NTBG060N065SC1 datasheet.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ.

Published: Nov 26, 2024 |