NTBG060N065SC1 Key Features
- Typ. RDS(on) = 44 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 74 nC)
- Low Output Capacitance (Coss = 133 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant
- Part: NTBG060N065SC1
- Description: SiC MOSFET
- Manufacturer: onsemi
- Size: 305.76 KB
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