NTD25P03L Description
MOSFET Power, P-Channel, Logic Level, DPAK -25 A, -30 V NTD25P03L Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and mutation modes. The source−to−drain diode recovery time is parable to a discrete fast recovery diode.
NTD25P03L Key Features
- S Prefix for Automotive and Other
NTD25P03L Applications
- S Prefix for Automotive and Other Applications Requiring Unique