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NTD85N02R - N-Channel Power MOSFET

Key Features

  • Planar HD3e Process for Fast Switching Performance.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Low Gate Charge to Minimize Switching Losses.
  • Pb.
  • Free Packages are Available.

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Datasheet Details

Part number NTD85N02R
Manufacturer onsemi
File Size 199.27 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTD85N02R Datasheet

Full PDF Text Transcription for NTD85N02R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTD85N02R. For precise diagrams, and layout, please refer to the original PDF.

NTD85N02R Power MOSFET, 85 A, 24 V, N-Channel DPAK/IPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Losses • Low Ca...

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ching Performance • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Low Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 24 V VGS ±20 V TA = 25°C ID 17 A TA = 85°C 12 Power Dissipation RqJA (Note 1) TA = 25°C PD Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD Rq