NTE4151P
NTE4151P is P-Channel MOSFET manufactured by onsemi.
Features
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- Small Outline Package (1.6 x 1.6 mm)
- SC-75 Standard Gullwing Package
- ESD Protected Gate
- These Devices are Pb-Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- High Side Load Switch
- DC-DC Conversion
- Small Drive Circuits
- Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25 C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Note 1)
Steady State
VDSS VGS ID
- 20
6.0
- 760 m A
Power Dissipation (Note 1)
SC-75 Steady State
SC-89 m W 301 313
Pulsed Drain Current tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)
IDM TJ, TSTG IS TL
1000 m A
- 55 to C
- 250 m...
