NTH4302 - HD3e Quad N-Channel

Datasheet Summary

Features

Ultra Low RDS(on) Provides Higher Efficiency.
Very Fast Switching due to Planar Technology and Leadless Package.
200% Footprint Reduction Compared to Similar DPAK Solution for the Same Power.
Up to 80 Amp per FET.
Very Low Vf (0.8 mV) Ideal for Synchronous Rectification.
Specifically Designed for DC-DC Buck Converter in VRM9.1.

ON Semiconductor

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Datasheet Details

Part number	NTH4302
Manufacturer	ON Semiconductor
File Size	56.75 KB
Description	HD3e Quad N-Channel
Datasheet	NTH4302 Datasheet
Additional preview pages of the NTH4302 datasheet.

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Full PDF Text Transcription

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NTH4302 Product Preview HD3e Quad N−Channel The NTH4302 is the first integrated Quad FET in a single package. It is the integration of 4 planar TMOS devices. It uses the latest HD3e TMOS technology from ON Semiconductor, with very high cell density and improved switching capability The NTH4302 is a 16-pin leadless device packaged in the new PInPAKt from ON Semiconductor. The PInPAK is a new flexible power package that uses the MAP process. The NTH4302 uses the same MOSFET as the NTD60N02R. However, with the PInPAK package, various other pairs of MOSFETs can be used to create additional custom applications.

Published: Jan 19, 2016 |