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NTH4L032N065M3S - SiC MOSFET

Features

  • Typical RDS(ON) = 32 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 55 nC).
  • High Speed Switching with Low Capacitance (Coss = 114 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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Datasheet Details

Part number NTH4L032N065M3S
Manufacturer onsemi
File Size 450.49 KB
Description SiC MOSFET
Datasheet download datasheet NTH4L032N065M3S Datasheet
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DATA SHEET www.onsemi.
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