NTH4L032N065M3S
Features
- Typical RDS(ON) = 32 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 55 n C)
- High Speed Switching with Low Capacitance (Coss = 114 p F)
- 100% Avalanche Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- SMPS, Solar Inverters, UPS, Energy Storage, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Power Dissipation Continuous Drain Current (Note 1)
VDSS
- 8/+22 V
TC = 25°C
187 W
TC = 100°C
Power Dissipation
Pulsed Drain Current (Note 2)
TC = 25°C,
IDM tp = 100 ms
Continuous Source- Drain Current (Body Diode)
TC = 25°C,
VGS =
- 3 V
TC = 100°C, VGS =
- 3 V
Pulsed Source- Drain Current (Body Diode) (Note 2)
TC = 25°C,
VGS...
