Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
Features
- Typ. RDS(on) = 40 mW
- Ultra Low Gate Charge (QG(tot) = 106 nC)
- High Speed Switching with Low Capacitance (Coss = 137 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 15/+25 V
Remended Operation Values TC < 175°C VGSop
- 5/+20 V of Gate- to- Source...