NTH4L040N120SC1 Datasheet SiC MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L.

NTH4L040N120SC1 sic mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTH4L040N120SC1
Manufacturer	onsemi
File Size	354.52 KB
Description	SiC MOSFET
Download	NTH4L040N120SC1 Download (PDF)

Key Features

Typ. RDS(on) = 40 mW.
Ultra Low Gate Charge (QG(tot) = 106 nC).
High Speed Switching with Low Capacitance (Coss = 137 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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