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NTHD5902T1 Power MOSFET Dual N−Channel ChipFETE
2.9 Amps, 30 Volts
Features
• Low RDS(on) for Higher Efficiency • Miniature ChipFET Surface Mount Package Saves Board Space
Applications
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• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
DUAL N−CHANNEL 2.9 AMPS, 30 VOLTS RDS(on) = 85 mW
D1 D2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "3.9 "2.8 IDM IS PD 2.1 1.
NTHD5902T1 Datasheet
