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NTHL190N65S3HF - N-Channel Power MOSFET

General Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 165 mW.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 316 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for NTHL190N65S3HF (Reference)

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MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTHL190N65S3HF Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junct...

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ET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V

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