NTLJD3119C
Key Features
- plementary N−Channel and P−Channel MOSFET
- WDFN Package with Exposed Drain Pad for Excellent Thermal
- Footprint Same as SC−88 Package
- Leading Edge Trench Technology for Low On Resistance
- 1.8 V Gate Threshold Voltage
- Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
- This is a Pb−Free Device
Applications
- Synchronous DC−DC Conversion Circuits
