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MOSFET – Power, Complementary, WDFN
2X2 mm
20 V/-20 V, 4.6 A/-4.1 A
NTLJD3119C
Features
• Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
• Footprint Same as SC−88 Package • Leading Edge Trench Technology for Low On Resistance • 1.8 V Gate Threshold Voltage • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device
Applications
• Synchronous DC−DC Conversion Circuits • Load/Power Management of Portable Devices like PDA’s, Cellular
Phones and Hard Drives
• Color Display and Camera Flash Regulators
DATA SHEET www.onsemi.com
V(BR)DSS
N−Channel 20 V
P−Channel −20 V
RDS(on) MAX 65 mW @ 4.5 V 85 mW @ 2.5 V 120 mW @ 1.8 V 100 mW @ −4.5 V 135 mW @ −2.5 V 200 mW @ −1.8 V
ID MAX 3.8 A 2.0 A
1.7 A −4.
NTLJD3119C Datasheet
