NTLJS4159N
NTLJS4159N is Power MOSFET manufactured by onsemi.
Features
- WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
- 2x2 mm Footprint Same as SC- 88
- Lowest RDS(on) in 2x2 mm Package
- 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
- Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
- This is a Pb- Free Device
Applications
- DC- DC Conversion
- Boost Circuits for LED Backlights
- Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
- Low Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±8.0
Continuous Drain Current (Note 1)
Steady TA = 25°C
State TA = 85°C
4.4 t ≤ 5 s TA = 25°C
Power Dissipation (Note 1)
Steady
State TA = 25°C t ≤5 s
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
TA =...
