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NTMD2C02R2 - Power MOSFET 2 Amps / 20 Volts

Key Features

  • SFET is charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain.
  • gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circ.

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Datasheet Details

Part number NTMD2C02R2
Manufacturer onsemi
File Size 117.25 KB
Description Power MOSFET 2 Amps / 20 Volts
Datasheet download datasheet NTMD2C02R2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.