NTMFD6H846NL - Dual N-Channel Power MOSFET

onsemi

Key Features

Small Footprint (5x6 mm) for Compact Design.
Low RDS(on) to Minimize Conduction Losses.
Low QG and Capacitance to Minimize Driver Losses.
These Devices are Pb.
Free and are RoHS Compliant.

NTMFD6H846NL dual n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTMFD6H846NL
Manufacturer	onsemi
File Size	212.31 KB
Description	Dual N-Channel Power MOSFET
Datasheet	NTMFD6H846NL Datasheet

Full PDF Text Transcription for NTMFD6H846NL (Reference)

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MOSFET – Power, Dual, N-Channel 80 V, 15 mW, 31 A NTMFD6H846NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG...

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or Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3) Steady TC = 25°C ID State TC = 100°C 31 A 22 Power Dissipation RqJC (Notes 1, 2) TC = 25°C PD TC = 100°C 34 W 17 Continuous Drain Current RqJA (Notes 1, 2, 3) Steady TA = 25°C ID State TA = 100°C 9.4 A 6.7 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD TA = 100°C 3.2 W 1.

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