NTMFS0D7N04XL
NTMFS0D7N04XL is 40V 349A N-Channel Power MOSFET manufactured by onsemi.
Features
- Low RDS(on) to Minimize Conduction Loss
- Low QRR with Soft Recovery to Minimize ERR Loss and Voltage
Spike
- Low QG and Capacitance to Minimize Driving and Switching Loss
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Typical Applications
- High Switching Frequency DC- DC Conversion
- Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Pulsed Drain Current Pulsed Source Current (Body Diode)
DC TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C, tp = 100 ms
VDSS VGS ID
IDM ISM
±20
1667 A
Operating Junction and Storage Temperature TJ, TSTG
- 55 to °C
Range
+175
Source Current (Body Diode)
Single Pulse Avalanche Energy (IPK = 97 A)
470 m J
(Note 3)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface- mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. EAS of 470 m J is based on started TJ = 25°C, IAS = 97 A, VDD = 32 V,
VGS = 10 V, 100% avalanche tested. 4. Rq JCT Thermal Resistance
- Junction to Case Top = 20...
