NTMFS10N3D2C Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
NTMFS10N3D2C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A
- Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant