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NTMFS10N7D2C - N-Channel MOSFET

General Description

This N

Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology.

in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for NTMFS10N7D2C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTMFS10N7D2C. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – Power Trench, N-Channel, Shielded Gate 100 V, 78 A, 7.2 mW NTMFS10N7D2C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTre...

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This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features  Shielded Gate MOSFET Technology  Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A  Max rDS(on) = 23.

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