NTMFS10N7D2C Overview
This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
NTMFS10N7D2C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A
- Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant