• Part: NTMFS5C645NL
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 78.13 KB
Download NTMFS5C645NL Datasheet PDF
onsemi
NTMFS5C645NL
Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation Rq JC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current Rq JA (Notes 1, 2, 3) Power Dissipation Rq JA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID IDM TJ, Tstg 60 ±20 100 71 79 40 22 15 3.7 1.8 820 - 55 to +175 A °C Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (IL(pk) = 5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 100 A EAS 185 m J TL 260 °C Stresses exceeding...