NTMFS5H600NL
NTMFS5H600NL is N-Channel Power MOSFET manufactured by onsemi.
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain C(Nuortreesnt1R, 3q J)C Power Dissipation Rq JC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2q J,A3) Power Dissipation Rq JA (Notes 1, 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
IDM TJ, Tstg
60 ±20 250 160 160 63 35 22 3.3 1.3 900
- 55 to + 150
A °C
Source Current (Body Diode)
IS 170 A
Single Pulse Drain- to- Source Avalanche Energy (IL(pk) = 26 A)
EAS 338 m J
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction- to- Case
- Steady...
