Click to expand full text
MOSFET- Power, Single N-Channel
80 V, 8.8 mW, 59 A
NTMYS008N08LH
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
59
A
42
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
73
W
37
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
ID
State
TA = 100°C
13
A
9
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
3.
NTMYS008N08LH Datasheet
