• Part: NTP30N20
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 304.21 KB
Download NTP30N20 Datasheet PDF
onsemi
NTP30N20
Features - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Avalanche Energy Specified - IDSS and RDS(on) Specified at Elevated Temperature - Pb- Free Package is Available- Applications - PWM Motor Controls - Power Supplies - Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Drain- to- Source Voltage (RGS = 1.0 MW) Gate- to- Source Voltage - Continuous - Non- Repetitive (tpv10 ms) Drain Current - Continuous @ TA 25°C - Continuous @ TA 100°C - Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 200 200 "30 "40 30 22 90 214 1.43 Vdc Vdc Vdc Adc W W/°C Operating and Storage Temperature Range TJ, Tstg - 55 to °C +175 Single Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 m H, RG = 25 W) Thermal Resistance - Junction- to- Case - Junction- to-...