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NTP8G206N
Power GaN Cascode Transistor 600 V, 150 mW
Features
• Fast Switching • Extremely Low Qrr • Transphorm Inside • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC
Power Dissipation – RqJC
Pulsed Drain Current
Steady State
Steady State
TC = 25°C TC = 100°C TC = 25°C
tp = 10 ms
VDSS VGS ID
PD
IDM
600 V ±18 V 17 A 12 96 W
60 A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to °C +150
Lead Temperature for Soldering Leads
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
NTP8G206N Datasheet
